Optical and Electrical Characterization of CuSnO₃ and ZnO Semiconductor Materials Using UV–Vis DRS and Four-Point Probe
DOI:
https://doi.org/10.36526/jc.v8i2.9112Keywords:
CuSnO₃, ZnO, band gap, konduktivitas, UV-Vis DRS, four-point probeAbstract
This study aimed to characterize the optical and electrical properties of CuSnO₃ and ZnO oxide semiconductor materials. The experimental procedure included the synthesis of CuSnO₃ thin films using the sol-gel method combined with the spin-coating technique on glass substrates, followed by calcination at 550°C. ZnO layers were subsequently deposited onto the CuSnO₃ films using the doctor-blade method and calcined at 350°C, 400°C, and 450°C. The materials were characterized using UV–Vis diffuse reflectance spectroscopy (UV–Vis DRS), the Four-Point Probe (FPP) method, and SEM–EDS. The results showed that CuSnO₃ exhibited a band gap of 2.3 eV, a resistivity of 0.5–1.0 Ω·cm, and a conductivity of 1.0–2.0 S/cm. ZnO exhibited a band gap of 3.3–3.4 eV, while increasing the calcination temperature reduced its resistivity to 10–50 Ω·cm and increased its conductivity to 0.10 S/cm. The CuSnO₃/ZnO heterostructure shows promising potential for applications in photovoltaic devices, gas sensors, and light-emitting diodes (LEDs).
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